Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Jedec95 Code
- MO-235
- Power Dissipation
- 74W
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Turn Off Delay Time
- 22 ns
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.0395Ohm
- Fall Time Typ
- 7 ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 4
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Breakdown Voltage
- 90V
- Turn On Delay Time
- 11 ns
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Element Configuration
- Single
- Number Of Elements
- 1
- Power Dissipation Max
- 74W Tc
- Kılıf / Paket
- SC-100, SOT-669
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 23nC @ 10V
- Pin Sayısı
- 4
- Terminal Kaplaması
- Tin (Sn)
- Kurşunsuz
- Lead Free
- Parça Durumu
- Active
- Terminal Sayısı
- 4
- Montaj Tipi
- Surface Mount
- Rise Time
- 8ns
- Rds On Max Id Vgs
- 39.5m Ω @ 15A, 10V
- Yayın Yılı
- 2010
- Continuous Drain Current Id
- 28.1A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 1847pF @ 50V
- Max Dual Supply Voltage
- 100V
- Fabrika Tedarik Süresi
- 12 Weeks
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