PSMN020-100YS,115

Specifications

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Operating Mode

ENHANCEMENT MODE

REACH Uyumluluk Kodu

not_compliant

Jedec95 Code

MO-235

Terminal Pozisyonu

SINGLE

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

100V

Pin Sayısı

4

Avalanche Energy Rating Eas

71 mJ

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

100V

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.0205Ohm

Terminal Kaplaması

Tin (Sn)

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

41nC @ 10V

Pin Sayısı

4

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Sayısı

4

Parça Durumu

Active

Vgs Max

±20V

JESD-609 Kodu

e3

Number Of Elements

1

Power Dissipation Max

106W Tc

Kılıf / Paket

SC-100, SOT-669

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

43A Tc

Yüzey Montaj

YES

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Yayın Yılı

2014

Rds On Max Id Vgs

20.5m Ω @ 15A, 10V

Transistor Application

SWITCHING

Continuous Drain Current Id

43A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

2210pF @ 50V

Pulsed Drain Currentmax Idm

172A