PSMN017-60YS,115

Specifications

Max Dual Supply Voltage

60V

Input Capacitance Ciss Max Vds

1172pF @ 30V

Continuous Drain Current Id

44A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Rds On Max Id Vgs

15.7m Ω @ 15A, 10V

Yayın Yılı

2010

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

44A Tc

Case Connection

DRAIN

Yüzey Montaj

YES

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

74W Tc

Vgs Max

±20V

JESD-609 Kodu

e3

Element Configuration

Single

Number Of Elements

1

Turn On Delay Time

13 ns

Drain To Source Breakdown Voltage

54V

Terminal Sayısı

4

Parça Durumu

Active

Rise Time

6.4ns

Montaj Tipi

Surface Mount

Pin Sayısı

4

Gate Charge Qg Max Vgs

20nC @ 10V

Terminal Formu

GULL WING

Terminal Kaplaması

Tin (Sn)

Çalışma Sıcaklığı

-55°C~175°C TJ

Fall Time Typ

12.7 ns

Radyasyon Dayanımı

No

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

4

Gate To Source Voltage Vgs

20V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Jedec95 Code

MO-235

Power Dissipation

74W

Threshold Voltage

3V

Operating Mode

ENHANCEMENT MODE