PSMN016-100PS,127

Specifications

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

96A

Fall Time Typ

18 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tube

Pin Sayısı

3

Gate To Source Voltage Vgs

20V

Jedec95 Code

TO-220AB

Power Dissipation

148W

Transistor Element Material

SILICON

Fet Type

N-Channel

Vgsth Max Id

4V @ 1mA

Operating Mode

ENHANCEMENT MODE

Turn Off Delay Time

36 ns

Rds On Max Id Vgs

16m Ω @ 15A, 10V

Yayın Yılı

2011

Continuous Drain Current Id

57A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Input Capacitance Ciss Max Vds

2404pF @ 50V

Pulsed Drain Currentmax Idm

288A

Max Dual Supply Voltage

100V

Fabrika Tedarik Süresi

12 Weeks

Current Continuous Drain Id25

57A Tj

Yüzey Montaj

NO

Case Connection

DRAIN

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Breakdown Voltage

100V

Turn On Delay Time

17 ns

Power Dissipation Max

148W Tc

Number Of Elements

1

Element Configuration

Single

JESD-609 Kodu

e3

Vgs Max

±20V

Kılıf / Paket

TO-220-3

Pin Sayısı

3

Gate Charge Qg Max Vgs

49nC @ 10V

Terminal Kaplaması

Tin (Sn)

Terminal Sayısı

3