PSMN016-100BS,118

Specifications

Turn Off Delay Time

36 ns

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

4V @ 1mA

Fet Type

N-Channel

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Power Dissipation

148W

Avalanche Energy Rating Eas

101 mJ

Pin Sayısı

3

Gate To Source Voltage Vgs

4.5V

Ambalaj

Tape & Reel (TR)

Drainsource On Resistancemax

0.016Ohm

Fall Time Typ

18 ns

Çalışma Sıcaklığı

-55°C~175°C TJ

RoHS Durumu

ROHS3 Compliant

Radyasyon Dayanımı

No

Parça Durumu

Active

Terminal Sayısı

2

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Rise Time

23ns

Terminal Formu

GULL WING

Gate Charge Qg Max Vgs

49nC @ 10V

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Kılıf / Paket

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation Max

148W Tc

Number Of Elements

1

JESD-609 Kodu

e3

Vgs Max

±20V

Turn On Delay Time

17 ns

Drain To Source Breakdown Voltage

100V

Jesd30 Code

R-PSSO-G2

Drive Voltage Max Rds On Min Rds On

10V

Current Continuous Drain Id25

57A Tj

Yüzey Montaj

YES

Case Connection

DRAIN

Fabrika Tedarik Süresi

12 Weeks

Max Dual Supply Voltage

100V

Input Capacitance Ciss Max Vds

2404pF @ 50V