PSMN015-100YLX

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

274A

Input Capacitance Ciss Max Vds

6139pF @ 25V

Transistor Application

SWITCHING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

69A

Yayın Yılı

2016

Rds On Max Id Vgs

14.7m Ω @ 20A, 10V

Drive Voltage Max Rds On Min Rds On

5V 10V

Jesd30 Code

R-PSSO-G4

Case Connection

DRAIN

Current Continuous Drain Id25

69A Tc

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

SC-100, SOT-669

Power Dissipation Max

195W Tc

Vgs Max

±20V

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Parça Durumu

Active

Terminal Sayısı

4

Pin Sayısı

4

Gate Charge Qg Max Vgs

86.3nC @ 10V

Terminal Formu

GULL WING

Çalışma Sıcaklığı

-55°C~175°C TJ

Drainsource On Resistancemax

0.015Ohm

Ds Breakdown Voltagemin

100V

RoHS Durumu

ROHS3 Compliant

Avalanche Energy Rating Eas

110 mJ

Additional Feature

AVALANCHE RATED

Drain To Source Voltage Vdss

100V

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Terminal Pozisyonu

SINGLE

Reference Standard

IEC-60134

Jedec95 Code

MO-235

Montaj

Surface Mount

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Operating Mode

ENHANCEMENT MODE

Vgsth Max Id

2.1V @ 1mA