Volume pricing
- 1+ pcs$3.50
- 10+ pcs$3.30
- 100+ pcs$3.12
- 500+ pcs$2.94
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- N-Channel
- Vgsth Max Id
- 4V @ 1mA
- Operating Mode
- ENHANCEMENT MODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- REACH Uyumluluk Kodu
- not_compliant
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Ambalaj
- Tube
- Drain To Source Voltage Vdss
- 100V
- Pin Sayısı
- 3
- Additional Feature
- AVALANCHE RATED
- RoHS Durumu
- ROHS3 Compliant
- Ds Breakdown Voltagemin
- 100V
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Drainsource On Resistancemax
- 0.015Ohm
- Gate Charge Qg Max Vgs
- 90nC @ 10V
- Pin Sayısı
- 3
- HTS Kodu
- 8541.29.00.75
- Terminal Kaplaması
- Tin (Sn)
- ECCN Kodu
- EAR99
- Seri
- TrenchMOS™
- Parça Durumu
- Active
- Terminal Sayısı
- 3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Through Hole
- Vgs Max
- ±20V
- JESD-609 Kodu
- e3
- Number Of Elements
- 1
- Power Dissipation Max
- 300W Tc
- Kılıf / Paket
- TO-220-3
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 75A Tc
- Yüzey Montaj
- NO
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 10V
- Rds On Max Id Vgs
- 15m Ω @ 25A, 10V
- Yayın Yılı
- 2009
- Continuous Drain Current Id
- 75A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
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