Volume pricing
- 1+ pcs$0.74
- 10+ pcs$0.69
- 100+ pcs$0.65
- 500+ pcs$0.62
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Fet Type
- N-Channel
- Operating Mode
- ENHANCEMENT MODE
- Radyasyon Dayanımı
- No
- Fall Time Typ
- 10 ns
- Pin Sayısı
- 4
- Turn On Delay Time
- 20 ns
- Weight
- 4.535924g
- Pin Sayısı
- 4
- Parça Durumu
- Active
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Rds On Max Id Vgs
- 12.9m Ω @ 15A, 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 12 Weeks
- Current Continuous Drain Id25
- 60A Tc
- Case Connection
- DRAIN
- Jedec95 Code
- MO-235
- Power Dissipation
- 106W
- Vgsth Max Id
- 4V @ 1mA
- Turn Off Delay Time
- 37 ns
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.00129Ohm
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Genişlik
- 6.35mm
- Ambalaj
- Digi-Reel®
- Yükseklik
- 6.35mm
- Gate To Source Voltage Vgs
- 20V
- Avalanche Energy Rating Eas
- 70 mJ
- Drain To Source Breakdown Voltage
- 80V
- JESD-609 Kodu
- e3
- Vgs Max
- ±20V
- Number Of Elements
- 1
- Power Dissipation Max
- 106W Tc
- Kılıf / Paket
- SC-100, SOT-669
- Gate Charge Qg Max Vgs
- 37nC @ 10V
- Terminal Formu
- GULL WING
- Uzunluk
- 6.35mm
- Terminal Kaplaması
- Tin (Sn)
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