Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Terminal Pozisyonu
- SINGLE
- Power Dissipation
- 91W
- Turn Off Delay Time
- 27.7 ns
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 2.45V @ 1mA
- Contact Plating
- Tin
- Fet Type
- N-Channel
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Fall Time Typ
- 15.5 ns
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- SOT-1210, 8-LFPAK33
- Power Dissipation Max
- 91W Tc
- Number Of Elements
- 1
- Vgs Max
- ±20V
- Turn On Delay Time
- 13.3 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Rise Time
- 20.2ns
- Parça Durumu
- Active
- Terminal Sayısı
- 4
- Terminal Formu
- GULL WING
- Gate Charge Qg Max Vgs
- 37.2nC @ 10V
- Pin Sayısı
- 8
- Max Dual Supply Voltage
- 60V
- Pulsed Drain Currentmax Idm
- 242A
- Input Capacitance Ciss Max Vds
- 2191pF @ 30V
- Transistor Application
- SWITCHING
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Continuous Drain Current Id
- 61A
- Yayın Yılı
- 2002
- Rds On Max Id Vgs
- 11.3m Ω @ 15A, 10V
- Jesd30 Code
- R-PSSO-G4
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Current Continuous Drain Id25
- 61A Tc
- Yüzey Montaj
- YES
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