Volume pricing
- 1+ pcs$0.17
- 10+ pcs$0.16
- 100+ pcs$0.15
- 500+ pcs$0.14
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2016
- Terminal Sayısı
- 2
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 3.2A
- Case Connection
- DRAIN
- Jesd30 Code
- R-PDSO-N2
- Yüzey Montaj
- YES
- Input Capacitance Ciss Max Vds
- 295pF @ 15V
- Number Of Elements
- 1
- Current Continuous Drain Id25
- 3.2A Ta
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Power Dissipation
- 400mW
- Max Dual Supply Voltage
- 30V
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 11 ns
- Ambient Temperature Range High
- 150°C
- Number Of Channels
- 1
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 11nC @ 10V
- Drainsource On Resistancemax
- 0.067Ohm
- Montaj Tipi
- Surface Mount
- Max Junction Temperature Tj
- 150°C
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fabrika Tedarik Süresi
- 4 Weeks
- Pin Sayısı
- 3
- Vgs Max
- ±20V
- Drain To Source Breakdown Voltage
- 30V
- Turn On Delay Time
- 3 ns
- Fet Type
- N-Channel
- Rise Time
- 12ns
- Operating Mode
- ENHANCEMENT MODE
- Yükseklik
- 400μm
- Parça Durumu
- Active
- Vgsth Max Id
- 2.5V @ 250μA
- Gate To Source Voltage Vgs
- 20V
- Fall Time Typ
- 3 ns
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