Volume pricing
- 1+ pcs$0.21
- 10+ pcs$0.20
- 100+ pcs$0.18
- 500+ pcs$0.17
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 6 ns
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 20ns
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fabrika Tedarik Süresi
- 4 Weeks
- Vgs Max
- ±8V
- Pin Sayısı
- 3
- Terminal Pozisyonu
- DUAL
- Rds On Max Id Vgs
- 54m Ω @ 3.2A, 4.5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 900mV @ 250μA
- Gate To Source Voltage Vgs
- 8V
- Power Dissipation Max
- 400mW Ta 8.33W Tc
- Fall Time Typ
- 4 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yüzey Montaj
- YES
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 551pF @ 10V
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Terminal Sayısı
- 3
- Yayın Yılı
- 2013
- Continuous Drain Current Id
- 3.2A
- Transistor Application
- SWITCHING
- Case Connection
- DRAIN
- Turn Off Delay Time
- 17 ns
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.054Ohm
- Gate Charge Qg Max Vgs
- 10nC @ 4.5V
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Current Continuous Drain Id25
- 3.2A Ta
- Max Dual Supply Voltage
- 20V
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