Volume pricing
- 1+ pcs$0.10
- 10+ pcs$0.10
- 100+ pcs$0.09
- 500+ pcs$0.09
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yüzey Montaj
- YES
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 556pF @ 10V
- Case Connection
- DRAIN
- Drive Voltage Max Rds On Min Rds On
- 1.2V 4.5V
- Terminal Sayısı
- 3
- Yayın Yılı
- 2013
- Transistor Application
- SWITCHING
- Continuous Drain Current Id
- 3.2A
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Drainsource On Resistancemax
- 0.064Ohm
- Gate Charge Qg Max Vgs
- 11.6nC @ 4.5V
- Radyasyon Dayanımı
- No
- Turn Off Delay Time
- 18 ns
- Ambalaj
- Tape & Reel (TR)
- Max Dual Supply Voltage
- 12V
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Transistor Element Material
- SILICON
- Current Continuous Drain Id25
- 3.2A Ta
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Rise Time
- 21ns
- Turn On Delay Time
- 6 ns
- Contact Plating
- Tin
- Pin Sayısı
- 3
- Vgs Max
- ±8V
- Montaj Tipi
- Surface Mount
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Fabrika Tedarik Süresi
- 4 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 45m Ω @ 3.2A, 4.5V
- Terminal Pozisyonu
- DUAL
- Power Dissipation Max
- 400mW Ta 8.33W Tc
- Fall Time Typ
- 9 ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Vgsth Max Id
- 900mV @ 250μA
- Gate To Source Voltage Vgs
- 8V
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