PMXB360ENEAZ

Specifications

Fet Type

N-Channel

Operating Mode

ENHANCEMENT MODE

Parça Durumu

Active

Rise Time

3.5ns

Turn On Delay Time

2 ns

Vgs Max

±20V

Pin Sayısı

3

Montaj Tipi

Surface Mount

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

450m Ω @ 1.1A, 10V

JESD-609 Kodu

e3

Terminal Pozisyonu

DUAL

Power Dissipation Max

400mW Ta 6.25W Tc

Additional Feature

LOGIC LEVEL COMPATIBLE

Fall Time Typ

3 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

2.7V @ 250μA

Gate To Source Voltage Vgs

20V

Yüzey Montaj

YES

Number Of Elements

1

Input Capacitance Ciss Max Vds

130pF @ 40V

Case Connection

DRAIN

Yayın Yılı

2013

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

3

Continuous Drain Current Id

1.1A

Transistor Application

SWITCHING

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Terminal Kaplaması

Tin (Sn)

Radyasyon Dayanımı

No

Gate Charge Qg Max Vgs

4.5nC @ 10V

Drainsource On Resistancemax

0.45Ohm

Turn Off Delay Time

9 ns

Ambalaj

Tape & Reel (TR)

Max Dual Supply Voltage

80V

Kılıf / Paket

3-XDFN Exposed Pad

Transistor Element Material

SILICON