PMXB120EPEZ

Specifications

Maximum Power Dissipation On Pcb Tc25c W

1070

Max Dual Supply Voltage

-30V

Kılıf / Paket

3-XDFN Exposed Pad

Current Continuous Drain Id25

2.4A Ta

Typical Gate Charge Vgs Nc

6.2@10V

Typical Turnon Delay Time Ns

4

RoHS Durumu

ROHS3 Compliant

Pin Sayısı

3

Gate Charge Qg Max Vgs

11nC @ 10V

Radyasyon Dayanımı

No

Ambalaj

Tape & Reel (TR)

Minimum Gate Threshold Voltage V

1

Maximum Gate Threshold Voltage V

2.5

Eu Rohs

Compliant

Eccn Us

EAR99

Typical Output Capacitance Pf

41

Typical Input Capacitance Vds Pf

309@15V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Yayın Yılı

2013

Typical Fall Time Ns

7

Typical Diode Forward Voltage V

0.8

Automotive

No

Typical Gate Plateau Voltage V

2.7

Power Dissipation Max

400mW Ta 8.3W Tc

Typical Gate Charge10v Nc

6.2

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

2.5V @ 250μA

Maximum Drain Source Resistance Mohm

120@10V

Package Length

1.1

Typical Gate To Source Charge Nc

0.9

Maximum Continuous Drain Current On Pcb Tc25c A

2.4

Operating Junction Temperature C

-55 to 150

Process Technology

TMOS

Nem Hassasiyeti (MSL)

1 (Unlimited)

Category

Power MOSFET

Package Width

1

Typical Reverse Transfer Capacitance Vds Pf

32@15V

Rds On Max Id Vgs

120m Ω @ 2.4A, 10V

Typical Rise Time Ns

11

Maximum Idss Ua

1