PMV65XPER

Specifications

Rds On Max Id Vgs

78m Ω @ 2.8A, 4.5V

Terminal Pozisyonu

DUAL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

1.25V @ 250μA

Power Dissipation Max

480mW Ta 6.25W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

P-Channel

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Reference Standard

AEC-Q101; IEC-60134

Montaj Tipi

Surface Mount

Fabrika Tedarik Süresi

4 Weeks

Configuration

SINGLE WITH BUILT-IN DIODE

Ds Breakdown Voltagemin

20V

Vgs Max

±12V

Pin Sayısı

3

Ambalaj

Cut Tape (CT)

Jedec95 Code

TO-236AB

Montaj

Surface Mount

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

9nC @ 4.5V

Terminal Formu

GULL WING

Current Continuous Drain Id25

2.8A Ta

Transistor Element Material

SILICON

Direnç

67mOhm

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Jesd30 Code

R-PDSO-G3

Input Capacitance Ciss Max Vds

618pF @ 10V

Number Of Elements

1

Yayın Yılı

2014

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Terminal Sayısı

3

Continuous Drain Current Id

2.8A

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

20V