PMV65XPEAR

Specifications

Maximum Gate Source Leakage Current Na

10000

Operating Mode

ENHANCEMENT MODE

Minimum Operating Temperature C

-55

Fet Type

P-Channel

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Montaj Tipi

Surface Mount

Maximum Idss Ua

1

Ds Breakdown Voltagemin

20V

Rds On Max Id Vgs

78m Ω @ 2.8A, 4.5V

Terminal Pozisyonu

DUAL

Typical Rise Time Ns

19

Package Width

1.4(Max)

Category

Small Signal

Process Technology

TMOS

Nem Hassasiyeti (MSL)

1 (Unlimited)

Package Length

3(Max)

Maximum Drain Source Resistance Mohm

78@4.5V

Vgsth Max Id

1.25V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

480mW Ta 6.25W Tc

Automotive

Yes

Number Of Elements

1

Typical Fall Time Ns

17

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Yayın Yılı

2014

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

618@10V

Eu Rohs

Compliant

Maximum Gate Threshold Voltage V

1.25

Standard Package Name

SOT

Jedec95 Code

TO-236AB

Ambalaj

Cut Tape (CT)

Lead Shape

Gull-wing

Drainsource On Resistancemax

0.078Ohm

Gate Charge Qg Max Vgs

9nC @ 4.5V

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

2.8A Ta

Typical Gate Charge Vgs Nc

5@4.5V