Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 55m Ω @ 2.4A, 4.5V
- JESD-609 Kodu
- e3
- Terminal Pozisyonu
- DUAL
- Fall Time Typ
- 23 ns
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Power Dissipation Max
- 510mW Ta
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 1.25V @ 250μA
- Gate To Source Voltage Vgs
- 12V
- Fet Type
- P-Channel
- Rise Time
- 13ns
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Active
- Drain To Source Breakdown Voltage
- -20V
- Turn On Delay Time
- 11 ns
- Contact Plating
- Tin
- Pin Sayısı
- 3
- Vgs Max
- ±12V
- Montaj Tipi
- Surface Mount
- Fabrika Tedarik Süresi
- 4 Weeks
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 11nC @ 4.5V
- Drainsource On Resistancemax
- 0.055Ohm
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 61 ns
- Max Dual Supply Voltage
- -20V
- Current Continuous Drain Id25
- 3.5A Ta
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation
- 510mW
- Yüzey Montaj
- YES
- Input Capacitance Ciss Max Vds
- 1000pF @ 10V
- Number Of Elements
- 1
- Drain To Source Voltage Vdss
- 20V
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