PMV37EN2R

Specifications

Gate To Source Voltage Vgs

20V

Vgsth Max Id

2V @ 250μA

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation Max

510mW Ta 5W Tc

Additional Feature

LOGIC LEVEL COMPATIBLE

Fall Time Typ

2 ns

Terminal Pozisyonu

DUAL

Rds On Max Id Vgs

36m Ω @ 4.5A, 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Montaj Tipi

Surface Mount

Vgs Max

±20V

Pin Sayısı

3

Contact Plating

Tin

Turn On Delay Time

3 ns

Rise Time

12ns

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Current Continuous Drain Id25

4.5A Ta

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Turn Off Delay Time

11 ns

Ambalaj

Cut Tape (CT)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

6.3nC @ 10V

RoHS Durumu

ROHS3 Compliant

Montaj

Surface Mount

Pin Sayısı

3

Continuous Drain Current Id

4.5A

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

3

Yayın Yılı

2014

Drain To Source Voltage Vdss

30V

Number Of Elements

1

Input Capacitance Ciss Max Vds

209pF @ 15V