PMV35EPER

Specifications

Additional Feature

LOGIC LEVEL COMPATIBLE

Power Dissipation Max

480mW Ta 1.2W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Vgsth Max Id

3V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

45m Ω @ 4.2A, 10V

Terminal Pozisyonu

DUAL

Ds Breakdown Voltagemin

30V

Vgs Max

±20V

Pin Sayısı

3

Montaj Tipi

Surface Mount

Reference Standard

IEC-60134

Configuration

SINGLE WITH BUILT-IN DIODE

Fabrika Tedarik Süresi

4 Weeks

Fet Type

P-Channel

Parça Durumu

Active

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Abs Id

4.2A

Terminal Formu

GULL WING

Current Continuous Drain Id25

5.3A Ta

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

RoHS Durumu

ROHS3 Compliant

Drainsource On Resistancemax

0.045Ohm

Gate Charge Qg Max Vgs

19.2nC @ 10V

Jedec95 Code

TO-236AB

Ambalaj

Tape & Reel (TR)

Drain To Source Voltage Vdss

30V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Sayısı

3

Yayın Yılı

2015

Transistor Application

SWITCHING

Yüzey Montaj

YES

Number Of Elements

1

Input Capacitance Ciss Max Vds

793pF @ 15V

Jesd30 Code

R-PDSO-G3