Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rds On Max Id Vgs
- 36m Ω @ 2.4A, 4.5V
- JESD-609 Kodu
- e3
- Terminal Pozisyonu
- DUAL
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fall Time Typ
- 33 ns
- Power Dissipation Max
- 510mW Ta
- Gate To Source Voltage Vgs
- 8V
- Vgsth Max Id
- 950mV @ 250μA
- Kurşunsuz
- Lead Free
- Operating Mode
- ENHANCEMENT MODE
- Parça Durumu
- Active
- Rise Time
- 21ns
- Fet Type
- P-Channel
- Turn On Delay Time
- 13 ns
- Drain To Source Breakdown Voltage
- -20V
- Pin Sayısı
- 3
- Contact Plating
- Tin
- Vgs Max
- ±8V
- Fabrika Tedarik Süresi
- 4 Weeks
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Gate Charge Qg Max Vgs
- 15.5nC @ 4.5V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Tepe Reflow Süresi (maks. sn)
- 30
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- ECCN Kodu
- EAR99
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 95 ns
- Max Dual Supply Voltage
- -20V
- Drain Currentmax Abs Id
- 4A
- Power Dissipation
- 510mW
- Transistor Element Material
- SILICON
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- Current Continuous Drain Id25
- 4A Ta
- Terminal Formu
- GULL WING
- Input Capacitance Ciss Max Vds
- 1890pF @ 10V
- Number Of Elements
- 1
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