Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.29
- 100+ pcs$0.27
- 500+ pcs$0.26
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Vce Saturation Max Ib Ic
- 250mV @ 2mA, 20mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- PNP
- Frekans
- 50MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2008
- Tepe Reflow Süresi (maks. sn)
- 40
- ECCN Kodu
- EAR99
- Collector Emitter Voltage Vceo
- 300V
- Fabrika Tedarik Süresi
- 4 Weeks
- Number Of Elements
- 1
- Collectorbase Capacitancemax
- 6pF
- Transition Frequency
- 50MHz
- Transistor Application
- SWITCHING
- Max Breakdown Voltage
- 300V
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 30mA 10V
- Max Power Dissipation
- 200mW
- Collector Base Voltage Vcbo
- 300V
- Element Configuration
- Single
- Gain Bandwidth Product
- 50MHz
- Terminal Pozisyonu
- DUAL
- Terminal Kaplaması
- Tin (Sn)
- Collectoremitter Breakdown Voltage
- 300V
- Pin Sayısı
- 3
- Montaj
- Surface Mount
- Current Collector Cutoff Max
- 100nA ICBO
- Emitter Base Voltage Vebo
- 5V
- Kılıf / Paket
- SC-70, SOT-323
- Power Dissipation
- 200mW
- Tepe Reflow Sıcaklığı (°C)
- 260
- Ambalaj
- Tape & Reel (TR)
- Montaj Tipi
- Surface Mount
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
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