Volume pricing
- 1+ pcs$0.30
- 10+ pcs$0.29
- 100+ pcs$0.27
- 500+ pcs$0.26
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Element Configuration
- Single
- Collector Base Voltage Vcbo
- 300V
- Terminal Pozisyonu
- DUAL
- Gain Bandwidth Product
- 50MHz
- Hfemin
- 25
- Terminal Kaplaması
- Tin (Sn)
- Pin Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 300V
- Number Of Elements
- 1
- Fabrika Tedarik Süresi
- 4 Weeks
- Collector Emitter Voltage Vceo
- 300V
- Transition Frequency
- 50MHz
- Dc Current Gain Hfe Min Ic Vce
- 40 @ 30mA 10V
- Max Breakdown Voltage
- 300V
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 200mW
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Type
- NPN
- Frekans
- 50MHz
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2009
- Tepe Reflow Süresi (maks. sn)
- 30
- ECCN Kodu
- EAR99
- JESD-609 Kodu
- e3
- Vce Saturation Max Ib Ic
- 500mV @ 2mA, 20mA
- Polaritychannel Type
- NPN
- Parça Durumu
- Active
- Seri
- Automotive, AEC-Q101
- Kurşunsuz
- Lead Free
- Max Collector Current
- 100mA
- Terminal Formu
- GULL WING
- Terminal Sayısı
- 3
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Emitter Base Voltage Vebo
- 6V
- Power Dissipation
- 200mW
- Kılıf / Paket
- SC-70, SOT-323
- Montaj Tipi
- Surface Mount
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