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PMST6428,135

Nexperia USA Inc.

PMST6428,135

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.03
  • 500+ pcs$0.02
  • 1000+ pcs$0.02
  • 2000+ pcs$0.02

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Specifications

Dc Current Gain Hfe Min Ic Vce
250 @ 100μA 5V
Transistor Application
SWITCHING
Max Power Dissipation
200mW
Fabrika Tedarik Süresi
4 Weeks
Number Of Elements
1
Collector Emitter Voltage Vceo
50V
Transition Frequency
100MHz
Terminal Kaplaması
Tin (Sn)
Pin Sayısı
3
Collectoremitter Breakdown Voltage
50V
Element Configuration
Single
Collector Base Voltage Vcbo
60V
Gain Bandwidth Product
700MHz
Terminal Pozisyonu
DUAL
Vce Saturation Max Ib Ic
600mV @ 5mA, 100mA
JESD-609 Kodu
e3
Tepe Reflow Süresi (maks. sn)
40
Yayın Yılı
2009
ECCN Kodu
EAR99
Frekans
700MHz
Transistor Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
150°C TJ
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
RoHS Durumu
ROHS3 Compliant
Terminal Formu
GULL WING
Max Collector Current
100mA
Terminal Sayısı
3
Pin Sayısı
3
Parça Durumu
Active
Seri
Automotive, AEC-Q101
Polaritychannel Type
NPN
Current Collector Cutoff Max
10nA ICBO
Montaj
Surface Mount
Ambalaj
Tape & Reel (TR)
Tepe Reflow Sıcaklığı (°C)
260
Montaj Tipi
Surface Mount
Emitter Base Voltage Vebo
6V
Kılıf / Paket
SC-70, SOT-323

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