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PMST5088,115

Nexperia USA Inc.

PMST5088,115

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.09
  • 500+ pcs$0.07
  • 1000+ pcs$0.05
  • 2000+ pcs$0.05

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Compliant

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Specifications

Terminal Pozisyonu
DUAL
Gain Bandwidth Product
100MHz
Element Configuration
Single
Collector Base Voltage Vcbo
35V
Pin Sayısı
3
Collectoremitter Breakdown Voltage
30V
Terminal Kaplaması
Tin (Sn)
Collectorbase Capacitancemax
4pF
Transition Frequency
100MHz
Fabrika Tedarik Süresi
4 Weeks
Number Of Elements
1
Collector Emitter Voltage Vceo
30V
Max Power Dissipation
200mW
Dc Current Gain Hfe Min Ic Vce
300 @ 100μA 5V
Transistor Application
AMPLIFIER
Çalışma Sıcaklığı
150°C TJ
Frekans
100MHz
Transistor Type
NPN
Nem Hassasiyeti (MSL)
1 (Unlimited)
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
40
JESD-609 Kodu
e3
Vce Saturation Max Ib Ic
500mV @ 1mA, 10mA
Polaritychannel Type
NPN
Kurşunsuz
Lead Free
Parça Durumu
Active
Seri
Automotive, AEC-Q101
Terminal Sayısı
3
Pin Sayısı
3
Terminal Formu
GULL WING
Max Collector Current
100mA
RoHS Durumu
ROHS3 Compliant
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
Vcesatmax
0.5 V
Kılıf / Paket
SC-70, SOT-323
Power Dissipation
200mW
Emitter Base Voltage Vebo
4.5V
Tepe Reflow Sıcaklığı (°C)
260
Ambalaj
Tape & Reel (TR)

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