PMPB55ENEAX

Specifications

Jesd30 Code

S-PDSO-N6

Reference Standard

AEC-Q101; IEC-60134

Fabrika Tedarik Süresi

8 Weeks

Input Capacitance Ciss Max Vds

435pF @ 30V

Yüzey Montaj

YES

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Drain To Source Voltage Vdss

60V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

12nC @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Yayın Yılı

2016

Parça Durumu

Active

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.056Ohm

Pin Sayısı

6

Current Continuous Drain Id25

4A Ta

Power Dissipation Max

1.65W Ta

Ds Breakdown Voltagemin

60V

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Drain Currentmax Abs Id

4A

Pulsed Drain Currentmax Idm

16A

Kılıf / Paket

6-UDFN Exposed Pad

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.7V @ 250μA

Vgs Max

±20V

Configuration

SINGLE WITH BUILT-IN DIODE

Case Connection

DRAIN

Rds On Max Id Vgs

56m Ω @ 10A, 10V

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Terminal Formu

NO LEAD