PMPB215ENEAX

Specifications

Drain To Source Voltage Vdss

80V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

7.2nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2013

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

215pF @ 40V

Fabrika Tedarik Süresi

8 Weeks

Reference Standard

IEC-60134

Jesd30 Code

S-PDSO-N6

Montaj

Surface Mount

Turn On Delay Time

3.5 ns

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Terminal Sayısı

6

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.23Ohm

Pin Sayısı

6

Current Continuous Drain Id25

1.9A Ta

Power Dissipation Max

1.6W Ta 15.6W Tc

Ds Breakdown Voltagemin

80V

Seri

Automotive, AEC-Q101

Terminal Pozisyonu

DUAL

Vgsth Max Id

2.7V @ 250μA

Vgs Max

±20V

Turn Off Delay Time

9.5 ns

Pulsed Drain Currentmax Idm

7.6A

Kılıf / Paket

6-UDFN Exposed Pad

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Radyasyon Dayanımı

No

Rds On Max Id Vgs

230m Ω @ 1.9A, 10V

Gate To Source Voltage Vgs

20V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Rise Time

2ns

Fall Time Typ

3 ns

Kurşunsuz

Lead Free