PMPB20XNEAZ

Specifications

Power Dissipation Max

460mW Ta 12.5W Tc

Ds Breakdown Voltagemin

20V

Drainsource On Resistancemax

0.02Ohm

Transistor Application

SWITCHING

Pin Sayısı

6

Current Continuous Drain Id25

7.5A Ta

Terminal Sayısı

6

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Number Of Elements

1

Input Capacitance Ciss Max Vds

930pF @ 10V

Fabrika Tedarik Süresi

8 Weeks

Reference Standard

AEC-Q101; IEC-60134

Jesd30 Code

S-PDSO-N6

Montaj

Surface Mount

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2016

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

20V

Fet Type

N-Channel

Gate Charge Qg Max Vgs

15nC @ 4.5V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current Id

7.5A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Formu

NO LEAD

Rds On Max Id Vgs

20m Ω @ 7.5A, 4.5V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Kılıf / Paket

6-UDFN Exposed Pad

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Terminal Pozisyonu

DUAL

Vgsth Max Id

1.25V @ 250μA

Vgs Max

±12V

Seri

Automotive, AEC-Q101