Volume pricing
- 1+ pcs$0.10
- 10+ pcs$0.09
- 100+ pcs$0.09
- 500+ pcs$0.08
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Kılıf / Paket
- 6-UDFN Exposed Pad
- Pulsed Drain Currentmax Idm
- 30A
- Radyasyon Dayanımı
- No
- Terminal Pozisyonu
- DUAL
- Vgsth Max Id
- 2V @ 250μA
- Vgs Max
- ±20V
- Turn Off Delay Time
- 9 ns
- Number Of Channels
- 1
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current Id
- 7.2A
- Contact Plating
- Tin
- Fall Time Typ
- 8 ns
- Drain To Source Breakdown Voltage
- 30V
- Rds On Max Id Vgs
- 19.5m Ω @ 7A, 10V
- Gate To Source Voltage Vgs
- 20V
- Montaj Tipi
- Surface Mount
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Rise Time
- 17ns
- Turn On Delay Time
- 9 ns
- Yüzey Montaj
- YES
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Pin Sayısı
- 6
- Input Capacitance Ciss Max Vds
- 435pF @ 10V
- Fabrika Tedarik Süresi
- 8 Weeks
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Yayın Yılı
- 2014
- Transistor Element Material
- SILICON
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 10.8nC @ 10V
- Power Dissipation Max
- 1.7W Ta 12.5W Tc
- Max Dual Supply Voltage
- 30V
- Transistor Application
- SWITCHING
- Drainsource On Resistancemax
- 0.0245Ohm
- Pin Sayısı
- 6
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