Volume pricing
- 1+ pcs$0.97
- 10+ pcs$0.92
- 100+ pcs$0.87
- 500+ pcs$0.82
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Rds On Max Id Vgs
- 19m Ω @ 9.2A, 10V
- Drainsource On Resistancemax
- 0.019Ohm
- Terminal Pozisyonu
- DUAL
- Drain To Source Voltage Vdss
- 30V
- Pin Sayısı
- 8
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 14.9A
- Terminal Formu
- GULL WING
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Operating Mode
- ENHANCEMENT MODE
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Max Dual Supply Voltage
- -30V
- Gate To Source Voltage Vgs
- 20V
- Fet Type
- P-Channel
- Gate Charge Qg Max Vgs
- 50nC @ 10V
- Power Dissipation Max
- 6.9W Tc
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Input Capacitance Ciss Max Vds
- 2240pF @ 25V
- Turn On Delay Time
- 10 ns
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 8
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Terminal Sayısı
- 8
- Vgsth Max Id
- 3V @ 250μA
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Application
- SWITCHING
- Fabrika Tedarik Süresi
- 16 Weeks
- Rise Time
- 8ns
- Parça Durumu
- Obsolete
- Fall Time Typ
- 21 ns
- JESD-609 Kodu
- e4
- Yüzey Montaj
- YES
- Vgs Max
- ±20V
- Jedec95 Code
- MS-012AA
- RoHS Durumu
- RoHS Compliant
- Yayın Yılı
- 2010
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Turn Off Delay Time
- 56 ns
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