Volume pricing
- 1+ pcs$0.19
- 10+ pcs$0.18
- 100+ pcs$0.17
- 500+ pcs$0.16
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Operating Mode
- ENHANCEMENT MODE
- Drive Voltage Max Rds On Min Rds On
- 1.5V 4.5V
- Current Continuous Drain Id25
- 4.7A Ta
- Drainsource On Resistancemax
- 0.054Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Jesd30 Code
- S-PBGA-B4
- Ambalaj
- Tape & Reel (TR)
- Parça Durumu
- Active
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Yayın Yılı
- 2015
- Gate Charge Qg Max Vgs
- 9nC @ 4.5V
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 13 Weeks
- Continuous Drain Current Id
- 4.7A
- Vgsth Max Id
- 900mV @ 250μA
- Ds Breakdown Voltagemin
- 12V
- Rds On Max Id Vgs
- 42m Ω @ 3A, 4.5V
- Power Dissipation Max
- 400mW Ta 12.5W Tc
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Input Capacitance Ciss Max Vds
- 335pF @ 6V
- Montaj Tipi
- Surface Mount
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Terminal Formu
- BALL
- Drain To Source Voltage Vdss
- 12V
- Reference Standard
- IEC-60134
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 4-XFBGA, WLCSP
- Terminal Sayısı
- 4
- Terminal Pozisyonu
- BOTTOM
- Vgs Max
- ±8V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
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