Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Vce Saturation Max Ib Ic
- 200mV @ 1mA, 10mA
- Polaritychannel Type
- NPN
- Emitter Base Voltage Vebo
- 6V
- Transistor Element Material
- SILICON
- Kılıf / Paket
- 3-XFDFN
- Transition Frequency
- 300MHz
- Terminal Pozisyonu
- BOTTOM
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 10mA 1V
- Power Dissipation
- 590mW
- Transistor Type
- NPN
- Max Collector Current
- 200mA
- Collector Base Voltage Vcbo
- 60V
- Çalışma Sıcaklığı
- 150°C TJ
- JESD-609 Kodu
- e3
- Montaj Tipi
- Surface Mount
- Collectoremitter Breakdown Voltage
- 40V
- Frekans
- 300MHz
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Temel Parça No
- PMBT3904M
- Collector Emitter Voltage Vceo
- 40V
- Seri
- Automotive, AEC-Q101
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 8 Weeks
- Current Collector Cutoff Max
- 500nA ICBO
- Case Connection
- COLLECTOR
- Terminal Kaplaması
- Tin (Sn)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tape & Reel (TR)
- Configuration
- SINGLE
- Parça Durumu
- Active
- Max Power Dissipation
- 250mW
- Yayın Yılı
- 2012
- Currentcollector Ic Max
- 200mA
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