Volume pricing
- 1+ pcs$2.44
- 10+ pcs$2.30
- 100+ pcs$2.17
- 500+ pcs$2.05
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fabrika Tedarik Süresi
- 12 Weeks
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
- Yüzey Montaj
- NO
- Turn On Delay Time
- 12 ns
- Seri
- TrenchMOS™
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Ambalaj
- Tube
- Turn Off Delay Time
- 43 ns
- Drain To Source Breakdown Voltage
- 200V
- Kılıf / Paket
- TO-220-3
- Terminal Sayısı
- 3
- Radyasyon Dayanımı
- No
- Input Capacitance Ciss Max Vds
- 1870pF @ 25V
- Case Connection
- DRAIN
- Rise Time
- 35ns
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Drainsource On Resistancemax
- 0.077Ohm
- Avalanche Energy Rating Eas
- 190 mJ
- HTS Kodu
- 8541.29.00.75
- Fall Time Typ
- 45 ns
- Montaj Tipi
- Through Hole
- Yayın Yılı
- 2009
- Power Dissipation Max
- 230W Tc
- Vgs Max
- ±20V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Element Configuration
- Single
- Rds On Max Id Vgs
- 77m Ω @ 15A, 10V
- Current Continuous Drain Id25
- 32.7A Tc
- Power Dissipation
- 230W
- Number Of Elements
- 1
- Gate Charge Qg Max Vgs
- 32.2nC @ 10V
- ECCN Kodu
- EAR99
- Terminal Kaplaması
- Tin (Sn)
- Continuous Drain Current Id
- 32.7A
- Çalışma Sıcaklığı
- -55°C~175°C TJ
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