Volume pricing
- 1+ pcs$1.77
- 10+ pcs$1.67
- 100+ pcs$1.57
- 500+ pcs$1.48
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation Max
- 6.9W Tc
- Montaj Tipi
- Surface Mount
- Yayın Yılı
- 2001
- Vgs Max
- ±20V
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Power Dissipation
- 6.9W
- Element Configuration
- Single
- Rds On Max Id Vgs
- 4.4m Ω @ 25A, 10V
- Current Continuous Drain Id25
- 30.4A Tc
- Nem Hassasiyeti (MSL)
- 2 (1 Year)
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 33nC @ 4.5V
- Number Of Elements
- 1
- Terminal Kaplaması
- NICKEL PALLADIUM GOLD
- Continuous Drain Current Id
- 30.4A
- ECCN Kodu
- EAR99
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- Max Dual Supply Voltage
- 30V
- Vgsth Max Id
- 2.15V @ 1mA
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Süresi (maks. sn)
- 30
- JESD-609 Kodu
- e4
- Parça Durumu
- Obsolete
- Pin Sayısı
- 8
- Fabrika Tedarik Süresi
- 16 Weeks
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 37 ns
- Seri
- TrenchMOS™
- Terminal Formu
- GULL WING
- Yüzey Montaj
- YES
- Drain To Source Breakdown Voltage
- 30V
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Ambalaj
- Tape & Reel (TR)
- Turn Off Delay Time
- 54 ns
- Gate To Source Voltage Vgs
- 20V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Operating Mode
- ENHANCEMENT MODE
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
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