Volume pricing
- 1+ pcs$0.03
- 500+ pcs$0.02
- 1000+ pcs$0.02
- 2000+ pcs$0.01
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frequency Transition
- 210MHz
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Transition Frequency
- 210MHz
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- NPN
- Pin Sayısı
- 3
- Collector Emitter Voltage Vceo
- 100mV
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 325mW
- Yayın Yılı
- 2014
- Terminal Pozisyonu
- DUAL
- Terminal Sayısı
- 3
- Case Connection
- COLLECTOR
- Terminal Formu
- NO LEAD
- Parça Durumu
- Active
- Number Of Elements
- 1
- Jesd30 Code
- R-PDSO-N3
- Dc Current Gain Hfe Min Ic Vce
- 70 @ 50mA 5V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Transistor Element Material
- SILICON
- Ambalaj
- Tape & Reel (TR)
- Transistor Type
- NPN - Pre-Biased
- Fabrika Tedarik Süresi
- 4 Weeks
- Current Collector Cutoff Max
- 500nA
- Reference Standard
- AEC-Q101; IEC-60134
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Power Max
- 325mW
- Montaj
- Surface Mount
- Resistor Base R1
- 1 k Ω
- Seri
- Automotive, AEC-Q101
- Collectoremitter Breakdown Voltage
- 50V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Max Collector Current
- 500mA
- Resistor Emitter Base R2
- 10 k Ω
- Vce Saturation Max Ib Ic
- 100mV @ 2.5mA, 50mA
- RoHS Durumu
- ROHS3 Compliant
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 10
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