Volume pricing
- 1+ pcs$0.19
- 10+ pcs$0.17
- 100+ pcs$0.16
- 500+ pcs$0.16
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ürün Durumu
- Active
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Number Of Elements Per Chip
- 3
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA, 5V
- Frequency Transition
- 180 MHz
- Transistor Polarity
- Single NPN
- Fabrika Paket Adedi
- 5000
- Montaj Tipi
- Surface Mount, Wettable Flank
- Voltage Collector Emitter Breakdown Max
- 50 V
- Continuous Collector Current
- 100mA
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Maximum Collector Emitter Voltage
- 50 V
- Package Type
- DFN1110D-3
- Resistor Emitter Base R2
- 47 kOhms
- Maximum Dc Collector Current
- 100 mA
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Currentcollector Ic Max
- 100 mA
- Ambalaj
- MouseReel
- Transistor Type
- PNP - Pre-Biased
- RoHS
- Details
- Part Aliases
- 934662611147
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Current Collector Cutoff Max
- 100nA
- Power Dissipation
- 340mW
- Power Max
- 340 mW
- Resistor Base R1
- 47 kOhms
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