Volume pricing
- 1+ pcs$0.08
- 500+ pcs$0.06
- 1000+ pcs$0.05
- 2000+ pcs$0.05
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Type
- PNP - Pre-Biased
- Frequency Transition
- 180 MHz
- Current Collector Cutoff Max
- 100nA
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Montaj Tipi
- Surface Mount, Wettable Flank
- Power Max
- 340 mW
- Voltage Collector Emitter Breakdown Max
- 50 V
- Resistor Base R1
- 4.7 kOhms
- Ürün Durumu
- Obsolete
- Package Type
- DFN1110D-3
- Maximum Collector Emitter Voltage
- 50 V
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Maximum Dc Collector Current
- 100 mA
- Resistor Emitter Base R2
- 47 kOhms
- Number Of Elements Per Chip
- 3
- Currentcollector Ic Max
- 100 mA
- Vce Saturation Max Ib Ic
- 100mV @ 250μA, 5mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 10mA, 5V
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