PDTC143XQC-QZ

Specifications

Ürün Durumu

Active

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Number Of Elements Per Chip

3

Typical Resistor Ratio

2.13

Dc Current Gain Hfe Min Ic Vce

50 @ 10mA, 5V

Fabrika Paket Adedi

5000

Typical Input Resistor

4.7 kOhms, 10 kOhms

Dc Collectorbase Gain Hfe Min

50 at 10 mA, 5 V

Emitter Base Voltage Vebo

7 V

Transistor Polarity

Single NPN

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature

- 55 C

Frequency Transition

230 MHz

Montaj Tipi

Surface Mount, Wettable Flank

Configuration

Single

Voltage Collector Emitter Breakdown Max

50 V

Montaj Stili

SMD/SMT

Continuous Collector Current

100mA

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Tedarikçi Cihaz Paketi

DFN1412D-3

Maximum Dc Collector Current

100 mA

Resistor Emitter Base R2

10 kOhms

Currentcollector Ic Max

100 mA

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

RoHS

Details

Collector Emitter Voltage Vceo Max

50 V

Ambalaj

MouseReel

Transistor Type

NPN - Pre-Biased

Current Collector Cutoff Max

100nA

Kılıf / Paket

3-XDFN Exposed Pad

Part Aliases

934663501147

Power Max

360 mW

Pd Power Dissipation

450 mW

Power Dissipation

360mW

Resistor Base R1

4.7 kOhms

Qualification

AEC-Q101

Seri

Automotive, AEC-Q101