PDTC124EQC-QZ

Specifications

Resistor Emitter Base R2

22 kOhms

Maximum Dc Collector Current

100 mA

Currentcollector Ic Max

100 mA

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Tedarikçi Cihaz Paketi

DFN1412D-3

Package Type

DFN1412D-3

Maximum Collector Emitter Voltage

50 V

Power Dissipation

360mW

Pd Power Dissipation

450 mW

Power Max

360 mW

Seri

Automotive, AEC-Q101

Resistor Base R1

22 kOhms

Qualification

AEC-Q101

Transistor Type

NPN - Pre-Biased

Ambalaj

MouseReel

Collector Emitter Voltage Vceo Max

50 V

RoHS

Details

Kılıf / Paket

3-XDFN Exposed Pad

Part Aliases

934663499147

Current Collector Cutoff Max

100nA

Number Of Elements Per Chip

3

Typical Resistor Ratio

1

Dc Current Gain Hfe Min Ic Vce

60 @ 5mA, 5V

Ürün Durumu

Active

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Voltage Collector Emitter Breakdown Max

50 V

Montaj Stili

SMD/SMT

Continuous Collector Current

100mA

Transistor Polarity

Single NPN

Maks. Çalışma Sıcaklığı

+ 150 C

Frequency Transition

230 MHz

Minimum Operating Temperature

- 55 C

Typical Input Resistor

22 kOhms

Fabrika Paket Adedi

5000

Dc Collectorbase Gain Hfe Min

60 at 5 mA, 5 V

Emitter Base Voltage Vebo

10 V

Montaj Tipi

Surface Mount, Wettable Flank

Configuration

Single