PDTC123JQB-QZ

Specifications

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Ürün Durumu

Active

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA, 5V

Typical Resistor Ratio

21

Number Of Elements Per Chip

3

Configuration

Single

Montaj Tipi

Surface Mount, Wettable Flank

Dc Collectorbase Gain Hfe Min

100 at 10 mA, 5 V

Emitter Base Voltage Vebo

5 V

Fabrika Paket Adedi

5000

Typical Input Resistor

2.2 kOhms, 47 kOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature

- 55 C

Frequency Transition

230 MHz

Transistor Polarity

Single NPN

Continuous Collector Current

100mA

Montaj Stili

SMD/SMT

Voltage Collector Emitter Breakdown Max

50 V

Maximum Collector Emitter Voltage

50 V

Package Type

DFN1110D-3

Tedarikçi Cihaz Paketi

DFN1110D-3

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Currentcollector Ic Max

100 mA

Maximum Dc Collector Current

100 mA

Resistor Emitter Base R2

47 kOhms

Current Collector Cutoff Max

100nA

Part Aliases

934663484147

Kılıf / Paket

3-XDFN Exposed Pad

RoHS

Details

Collector Emitter Voltage Vceo Max

50 V

Ambalaj

MouseReel

Transistor Type

NPN - Pre-Biased

Qualification

AEC-Q101

Resistor Base R1

2.2 kOhms

Seri

Automotive, AEC-Q101

Power Max

340 mW

Pd Power Dissipation

420 mW

Power Dissipation

340mW