Volume pricing
- 1+ pcs$0.02
- 10+ pcs$0.01
- 100+ pcs$0.01
- 500+ pcs$0.01
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Power Dissipation
- 250mW
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Transition Frequency
- 230MHz
- Resistor Base R1
- 10 k Ω
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Base Voltage Vcbo
- 50V
- Emitter Base Voltage Vebo
- 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- RoHS Durumu
- ROHS3 Compliant
- Yükseklik
- 1.1mm
- Transistor Application
- SWITCHING
- Max Collector Current
- 100mA
- Qualification Status
- Not Qualified
- Terminal Kaplaması
- Tin (Sn)
- Terminal Pozisyonu
- DUAL
- Terminal Formu
- GULL WING
- Ambalaj
- Tape & Reel (TR)
- ECCN Kodu
- EAR99
- Frequency Transition
- 230MHz
- Montaj Tipi
- Surface Mount
- Max Junction Temperature Tj
- 150°C
- Terminal Sayısı
- 3
- Polarity
- NPN
- Yayın Yılı
- 2002
- Tepe Reflow Süresi (maks. sn)
- 40
- Number Of Elements
- 1
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 150mV @ 500μA, 10mA
- Fabrika Tedarik Süresi
- 4 Weeks
- Ambient Temperature Range High
- 150°C
- Pin Sayısı
- 3
- Resistor Emitter Base R2
- 10 k Ω
- Current Collector Cutoff Max
- 1μA
- Transistor Type
- NPN - Pre-Biased
- Pin Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA 5V
- Hfemin
- 30
- Temel Parça No
- PDTC114
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
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