PDTB143EQAZ

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Nem Hassasiyeti (MSL)

1 (Unlimited)

Configuration

SINGLE WITH BUILT-IN RESISTOR

Transistor Element Material

SILICON

Resistor Base R1

4.7 k Ω

Transition Frequency

150MHz

Transistor Polarity

PNP

Transistor Application

SWITCHING

Continuous Collector Current

500

Max Collector Current

500mA

Montaj

Surface Mount

Terminal Formu

NO LEAD

Terminal Pozisyonu

DUAL

RoHS Durumu

ROHS3 Compliant

Case Connection

COLLECTOR

Jesd30 Code

R-PDSO-N3

Power Max

325mW

Fabrika Tedarik Süresi

4 Weeks

Polaritychannel Type

PNP

Terminal Sayısı

3

Montaj Tipi

Surface Mount

Ambalaj

Tape & Reel (TR)

Frequency Transition

150MHz

Vce Saturation Max Ib Ic

100mV @ 2.5mA, 50mA

Parça Durumu

Active

Number Of Elements

1

Yayın Yılı

2014

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Additional Feature

BUILT IN BIAS RESISTANCE RATIO IS 1

Reference Standard

AEC-Q101; IEC-60134

Kılıf / Paket

3-XDFN Exposed Pad

Collectoremitter Breakdown Voltage

50V

Collector Emitter Voltage Vceo

100mV

Current Collector Cutoff Max

500nA

Resistor Emitter Base R2

4.7 k Ω

Pin Sayısı

3

Seri

Automotive, AEC-Q101

Dc Current Gain Hfe Min Ic Vce

60 @ 50mA 5V

Transistor Type

PNP - Pre-Biased

Max Power Dissipation

325mW