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Specifications
- Ürün Durumu
- Active
- Currentcollector Ic Max
- 100 mA
- Pd Power Dissipation
- 450 mW
- Minimum Operating Temperature
- - 55 C
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Typical Input Resistor
- 4.7 kOhms, 10 kOhms
- Continuous Collector Current
- - 100 mA
- Voltage Collector Emitter Breakdown Max
- 50 V
- Maximum Dc Collector Current
- 100 mA
- Transistor Polarity
- PNP
- Resistor Base R1
- 4.7 kOhms
- Maximum Collector Emitter Voltage
- -50 V
- Configuration
- Single
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Maks. Çalışma Sıcaklığı
- + 150 C
- Transistor Type
- PNP - Pre-Biased
- Typical Resistor Ratio
- 2.13
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA, 5V
- Resistor Emitter Base R2
- 10 kOhms
- Current Collector Cutoff Max
- 100nA
- Dc Collectorbase Gain Hfe Min
- 50 at - 10 mA, - 5 V
- Collector Emitter Voltage Vceo Max
- - 50 V
- Number Of Elements Per Chip
- 3
- Power Max
- 360 mW
- Package Type
- DFN1412D-3
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Frequency Transition
- 180 MHz
- Montaj Tipi
- Surface Mount, Wettable Flank
- Montaj Stili
- SMD/SMT
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