Volume pricing
- 1+ pcs$0.04
- 500+ pcs$0.03
- 1000+ pcs$0.03
- 2000+ pcs$0.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Power Dissipation
- 280mW
- Transistor Type
- PNP - Pre-Biased
- Dc Current Gain Hfe Min Ic Vce
- 50 @ 10mA 5V
- Seri
- Automotive, AEC-Q101
- Pin Sayısı
- 3
- Resistor Emitter Base R2
- 10 k Ω
- Current Collector Cutoff Max
- 1μA
- Collector Emitter Voltage Vceo
- 100mV
- Collectoremitter Breakdown Voltage
- 50V
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Reference Standard
- AEC-Q101; IEC-60134
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 2.1
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Yayın Yılı
- 2014
- Number Of Elements
- 1
- Parça Durumu
- Active
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Frequency Transition
- 180MHz
- Ambalaj
- Tape & Reel (TR)
- Terminal Sayısı
- 3
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- PNP
- Fabrika Tedarik Süresi
- 4 Weeks
- Power Max
- 280mW
- Jesd30 Code
- R-PDSO-N3
- Case Connection
- COLLECTOR
- RoHS Durumu
- ROHS3 Compliant
- Terminal Pozisyonu
- DUAL
- Terminal Formu
- NO LEAD
- Max Collector Current
- 100mA
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Transition Frequency
- 180MHz
- Resistor Base R1
- 4.7 k Ω
- Transistor Element Material
- SILICON
- Configuration
- SINGLE WITH BUILT-IN RESISTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
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