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RoHS
Compliant
Support
Technical team support
Specifications
- Resistor Base R1
- 4.7 kOhms
- Transistor Polarity
- Single PNP
- Maximum Dc Collector Current
- 100 mA
- Configuration
- Single
- Maximum Collector Emitter Voltage
- -50 V
- Power Dissipation
- 340mW
- Emitter Base Voltage Vebo
- - 10 V
- Qualification
- AEC-Q101
- RoHS
- Details
- Voltage Collector Emitter Breakdown Max
- 50 V
- Currentcollector Ic Max
- 100 mA
- Ürün Durumu
- Active
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Typical Input Resistor
- 4.7 kOhms
- Continuous Collector Current
- 100mA
- Pd Power Dissipation
- 420 mW
- Minimum Operating Temperature
- - 55 C
- Package Type
- DFN1110D-3
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Part Aliases
- 934663470147
- Montaj Stili
- SMD/SMT
- Montaj Tipi
- Surface Mount, Wettable Flank
- Ambalaj
- MouseReel
- Frequency Transition
- 180 MHz
- Fabrika Paket Adedi
- 5000
- Power Max
- 340 mW
- Number Of Elements Per Chip
- 3
- Collector Emitter Voltage Vceo Max
- - 50 V
- Typical Resistor Ratio
- 1
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 10mA, 5V
- Seri
- Automotive, AEC-Q101
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Transistor Type
- PNP - Pre-Biased
- Current Collector Cutoff Max
- 100nA
- Dc Collectorbase Gain Hfe Min
- 30 at - 10 mA, - 5 V
- Resistor Emitter Base R2
- 4.7 kOhms
- Maks. Çalışma Sıcaklığı
- + 150 C
- Kılıf / Paket
- 3-XDFN Exposed Pad
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