PDTA143EQB-QZ

Specifications

Resistor Base R1

4.7 kOhms

Transistor Polarity

Single PNP

Maximum Dc Collector Current

100 mA

Configuration

Single

Maximum Collector Emitter Voltage

-50 V

Power Dissipation

340mW

Emitter Base Voltage Vebo

- 10 V

Qualification

AEC-Q101

RoHS

Details

Voltage Collector Emitter Breakdown Max

50 V

Currentcollector Ic Max

100 mA

Ürün Durumu

Active

Tedarikçi Cihaz Paketi

DFN1110D-3

Typical Input Resistor

4.7 kOhms

Continuous Collector Current

100mA

Pd Power Dissipation

420 mW

Minimum Operating Temperature

- 55 C

Package Type

DFN1110D-3

Vce Saturation Max Ib Ic

100mV @ 500μA, 10mA

Part Aliases

934663470147

Montaj Stili

SMD/SMT

Montaj Tipi

Surface Mount, Wettable Flank

Ambalaj

MouseReel

Frequency Transition

180 MHz

Fabrika Paket Adedi

5000

Power Max

340 mW

Number Of Elements Per Chip

3

Collector Emitter Voltage Vceo Max

- 50 V

Typical Resistor Ratio

1

Dc Current Gain Hfe Min Ic Vce

30 @ 10mA, 5V

Seri

Automotive, AEC-Q101

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Transistor Type

PNP - Pre-Biased

Current Collector Cutoff Max

100nA

Dc Collectorbase Gain Hfe Min

30 at - 10 mA, - 5 V

Resistor Emitter Base R2

4.7 kOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

3-XDFN Exposed Pad