Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS
- Details
- Voltage Collector Emitter Breakdown Max
- 50 V
- Currentcollector Ic Max
- 100 mA
- Ürün Durumu
- Active
- Continuous Collector Current
- 100mA
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Resistor Base R1
- 22 kOhms
- Maximum Dc Collector Current
- 100 mA
- Transistor Polarity
- Single PNP
- Power Dissipation
- 340mW
- Maximum Collector Emitter Voltage
- -50 V
- Ürün Tipi
- BJTs - Bipolar Transistors - Pre-Biased
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 5mA, 5V
- Transistor Type
- PNP - Pre-Biased
- Current Collector Cutoff Max
- 100nA
- Resistor Emitter Base R2
- 47 kOhms
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Package Type
- DFN1110D-3
- Part Aliases
- 934662599147
- Montaj Tipi
- Surface Mount, Wettable Flank
- Frequency Transition
- 180 MHz
- Ambalaj
- MouseReel
- Fabrika Paket Adedi
- 5000
- Power Max
- 340 mW
- Number Of Elements Per Chip
- 3
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