PDTA123JQB-QZ

Specifications

Current Collector Cutoff Max

100nA

Power Max

340 mW

Montaj Stili

SMD/SMT

Resistor Base R1

2.2 kOhms

Vce Saturation Max Ib Ic

100mV @ 250μA, 5mA

Dc Current Gain Hfe Min Ic Vce

100 @ 10mA, 5V

Configuration

Single

Fabrika Paket Adedi

5000

Voltage Collector Emitter Breakdown Max

50 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Resistor Emitter Base R2

47 kOhms

Transistor Type

PNP - Pre-Biased

Power Dissipation

340mW

Ürün Durumu

Active

Minimum Operating Temperature

- 55 C

Tedarikçi Cihaz Paketi

DFN1110D-3

Typical Resistor Ratio

21

Emitter Base Voltage Vebo

- 5 V

Maximum Dc Collector Current

100 mA

RoHS

Details

Dc Collectorbase Gain Hfe Min

100 at - 10 mA, - 5 V

Package Type

DFN1110D-3

Seri

Automotive, AEC-Q101

Part Aliases

934663475147

Frequency Transition

180 MHz

Collector Emitter Voltage Vceo Max

- 50 V

Transistor Polarity

Single PNP

Kılıf / Paket

3-XDFN Exposed Pad

Currentcollector Ic Max

100 mA

Pd Power Dissipation

420 mW

Number Of Elements Per Chip

3

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Input Resistor

2.2 kOhms, 47 kOhms

Continuous Collector Current

100mA

Maximum Collector Emitter Voltage

-50 V

Montaj Tipi

Surface Mount, Wettable Flank

Ambalaj

MouseReel

Qualification

AEC-Q101