Volume pricing
- 1+ pcs$0.25
- 10+ pcs$0.24
- 100+ pcs$0.23
- 500+ pcs$0.21
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Ürün Durumu
- Active
- Transistor Type
- PNP - Pre-Biased
- Resistor Emitter Base R2
- 10 kOhms
- Typical Resistor Ratio
- 1
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Minimum Operating Temperature
- - 55 C
- Dc Current Gain Hfe Min Ic Vce
- 30 @ 5mA, 5V
- Vce Saturation Max Ib Ic
- 100mV @ 500μA, 10mA
- Resistor Base R1
- 10 kOhms
- Montaj Stili
- SMD/SMT
- Current Collector Cutoff Max
- 100nA
- Power Max
- 360 mW
- Voltage Collector Emitter Breakdown Max
- 50 V
- Configuration
- Single
- Typical Input Resistor
- 10 kOhms
- Continuous Collector Current
- - 100 mA
- Number Of Elements Per Chip
- 3
- Maks. Çalışma Sıcaklığı
- + 150 C
- Pd Power Dissipation
- 450 mW
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Currentcollector Ic Max
- 100 mA
- Montaj Tipi
- Surface Mount, Wettable Flank
- Maximum Collector Emitter Voltage
- -50 V
- Frequency Transition
- 180 MHz
- Package Type
- DFN1412D-3
- Dc Collectorbase Gain Hfe Min
- 30 at - 5 mA, - 5 V
- Maximum Dc Collector Current
- 100 mA
- Transistor Polarity
- PNP
- Collector Emitter Voltage Vceo Max
- - 50 V
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