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PBSS5350D,135

Nexperia USA Inc.

PBSS5350D,135

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.08
  • 500+ pcs$0.06
  • 1000+ pcs$0.05
  • 2000+ pcs$0.04

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Compliant

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Specifications

Gerilim
50V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Montaj Tipi
Surface Mount
Power Dissipation
750mW
Polaritychannel Type
PNP
Collectoremitter Breakdown Voltage
50V
Number Of Elements
1
Parça Durumu
Active
Fabrika Tedarik Süresi
4 Weeks
Max Power Dissipation
750mW
Radyasyon Dayanımı
No
Transistor Element Material
SILICON
Tepe Reflow Sıcaklığı (°C)
260
Vce Saturation Max Ib Ic
300mV @ 200mA, 2A
Akım
3A
Max Breakdown Voltage
50V
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Emitter Base Voltage Vebo
6V
Tepe Reflow Süresi (maks. sn)
40
Kılıf / Paket
SC-74, SOT-457
Temel Parça No
PBSS5350
Terminal Formu
GULL WING
Dc Current Gain Hfe Min Ic Vce
100 @ 2A 2V
Current Collector Cutoff Max
100nA ICBO
Transition Frequency
100MHz
Collector Emitter Voltage Vceo
50V
Terminal Kaplaması
Tin (Sn)
Terminal Sayısı
6
Transistor Type
PNP
Max Collector Current
3A
Pin Sayısı
6
Frekans
100MHz
Montaj
Surface Mount
Transistor Application
SWITCHING
Yayın Yılı
2011
Çalışma Sıcaklığı
150°C TJ
Pin Sayısı
6
Ambalaj
Tape & Reel (TR)
Collector Base Voltage Vcbo
60V

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