Volume pricing
- 1+ pcs$0.08
- 500+ pcs$0.06
- 1000+ pcs$0.05
- 2000+ pcs$0.04
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 8 Weeks
- Number Of Elements
- 1
- Vce Saturation Max Ib Ic
- 275mV @ 300mA, 6A
- Transistor Element Material
- SILICON
- Case Connection
- COLLECTOR
- Collectoremitter Breakdown Voltage
- 12V
- Polaritychannel Type
- NPN
- Montaj Tipi
- Surface Mount
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 2.1W
- Kılıf / Paket
- 3-PowerUDFN
- Dc Current Gain Hfe Min Ic Vce
- 260 @ 2A 2V
- Temel Parça No
- PBSS4612
- Hfemin
- 200
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Max Breakdown Voltage
- 12V
- Emitter Base Voltage Vebo
- 6V
- Transistor Type
- NPN
- Pin Sayısı
- 3
- Max Collector Current
- 6A
- Collector Emitter Voltage Vceo
- 12V
- Turn On Timemax Ton
- 80ns
- Current Collector Cutoff Max
- 100nA
- Transition Frequency
- 80MHz
- Terminal Kaplaması
- Tin (Sn)
- Terminal Sayısı
- 3
- Gain Bandwidth Product
- 80MHz
- Terminal Pozisyonu
- DUAL
- JESD-609 Kodu
- e3
- Collector Base Voltage Vcbo
- 12V
- Transistor Application
- SWITCHING
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 3
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2010
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