Volume pricing
- 1+ pcs$0.04
- 500+ pcs$0.03
- 1000+ pcs$0.02
- 2000+ pcs$0.02
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Max Breakdown Voltage
- 20V
- Element Configuration
- Single
- RoHS Durumu
- ROHS3 Compliant
- Emitter Base Voltage Vebo
- 5V
- Kılıf / Paket
- SOT-563, SOT-666
- Temel Parça No
- PBSS4220
- Terminal Formu
- FLAT
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 1A 2V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 900mW
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- NPN
- Collectoremitter Breakdown Voltage
- 20V
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 900mW
- Fabrika Tedarik Süresi
- 4 Weeks
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Vce Saturation Max Ib Ic
- 350mV @ 200mA, 2A
- Frekans
- 210MHz
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2009
- Ambalaj
- Tape & Reel (TR)
- Pin Sayısı
- 6
- Çalışma Sıcaklığı
- 150°C TJ
- Collector Base Voltage Vcbo
- 20V
- JESD-609 Kodu
- e3
- ECCN Kodu
- EAR99
- Kurşunsuz
- Lead Free
- Terminal Pozisyonu
- DUAL
- Gain Bandwidth Product
- 210MHz
- Transition Frequency
- 210MHz
- Current Collector Cutoff Max
- 100nA
- Collector Emitter Voltage Vceo
- 20V
- Terminal Sayısı
- 6
- Terminal Kaplaması
- Tin (Sn)
- Transistor Type
- NPN
- Max Collector Current
- 2A
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